PSMN009-100W

PSMN009-100W, N-channel enhancement mode field-effect power transistor, TO, 100V, 79A, 300W

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Price:: US $0.65~1.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	1.00 / Piece
101 ~ 500 :	0.80 / Piece
501 ~ 1000 :	0.65 / Piece

PartNumber:: PSMN009-100W

Brand:: Philips Electronics India Limited - PHILIPS | Pack: TO | D/C: 07+

Availability:: Supply Ability: 2/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2012-12-25

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Part Number:PSMN009-100W
US $0.65 - 1.00
Quantity:

piece

Product Summary

The PSMN009-100W is an N-channel enhancement mode field-effect power transistor in a plastic envelope using trench technology. The PSMN009-100W has very low on-state resistance. It is intended for use in DC to DC converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.

Parametrics

PSMN009-100W absolute maximum ratings: (1)VDSS Drain-source voltage Tj = 25℃ to 175℃: 100V; (2)VDGR Drain-gate voltage Tj = 25℃ to 175℃; RGS = 20kW: 100V; (3)VGS Gate-source voltage: ±20V; (4)ID Continuous drain current Tmb = 25℃: 1001A; (5)Tmb = 100℃: 79A; (6)IDM Pulsed drain current Tmb = 25℃: 300A; (7)PD Total power dissipation Tmb = 25℃: 300W; (8)Tj, Tstg Operating junction and storage temperature - 55 to 175℃.

Features

PSMN009-100W features: (1) Trench technology; (2) Very low on-state resistance; (3) Fast switching; (4) High thermal cycling performance; (5) Low thermal resistance.