Product Summary
The D1028UK is a metal gate RF silicon FET, which is 300W-28V-175MHz. The applications of the D1028UK include VHF/UHF communications from 1 MHz to 200 MHz.
Parametrics
D1028UK absolute maximum ratings: (1)Power Dissipation: 438 W; (2)Drain-Source Breakdown Voltage: 70 V; (3)Gate-Source Breakdown Voltage: ±20 V; (4)Drain Current: 30 A; (5)Storage Temperature: -65 to 150℃; (6)Maximum Operating Junction Temperature: 200℃.
Features
D1028UK features: (1)simplified amplifier design; (2)suitable for broad band applications; (3)low Crss; (4)simple bias circuits; (5)low noise; (6)high gain -13 dB minimum.
Diagrams

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| Image | Part No | Mfg | Description | ![]() |
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![]() D1024UK |
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![]() D1025UK |
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![]() D1027UK |
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![]() D1028UK |
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![]() D1029N18T |
![]() Infineon Technologies |
![]() Rectifiers 1.8KV 1.3KA |
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![]() D1029N20T |
![]() Infineon Technologies |
![]() Rectifiers 2KV 1.3KA |
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![]() Negotiable |
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(China (Mainland))









