Product Summary

The BLF1820E-90 is a UHF power LDMOS transistor. The application of the BLF1820E-90 include RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.

Parametrics

BLF1820E-90 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: ±15V; (3)ID DC drain current: 12A; (4)Tstg storage temperature: -65℃ +150℃; (5)Tj junction temperature: 200℃

Features

BLF1820E-90 features: (1)Typical 2-tone performance at a supply voltage of 26V and IDQ of 500mA: Output power = 90W (PEP), Gain = 12dB, Efficiency = 32%, dim = -26dBc; (2)Easy power control; (3)Excellent ruggedness; (4)High power gain; (5)Excellent thermal stability; (6)Designed for broadband operation (1800 to 2000 MHz); (7)Internally matched for ease of use.

Diagrams

BLF1820E-90 block diagram

BLF1043
BLF1043
NXP Semiconductors
Transistors RF MOSFET Power RF LDMOS 10W UHF
Data Sheet
Negotiable 
BLF1043,112
BLF1043,112
NXP Semiconductors
Transistors RF MOSFET Power RF LDMOS 10W UHF
Data Sheet
0-107: $20.21
107-250: $18.88
BLF1043,135
BLF1043,135
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS
Data Sheet
0-271: $24.91
BLF1046
BLF1046
NXP Semiconductors
Transistors RF MOSFET Power RF LDMOS 45W UHF
Data Sheet
Negotiable 
BLF1046,112
BLF1046,112
NXP Semiconductors
Transistors RF MOSFET Power RF LDMOS 45W UHF
Data Sheet
0-41: $43.52
41-100: $40.66
BLF1046,135
BLF1046,135
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS
Data Sheet
0-243: $47.90