Product Summary

The STP4000QFP is an "ultra high density" power MOS transistor. The applications of the STP4000QFP include high current, high speed switching, power motor control, dc-dc & dc-ac converters, syncronous rectification.

Parametrics

STP4000QFP absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 30 V; (2)VDGR, Drain- gate Voltage (RGS = 20 kW): 30 V; (3)VGS, Gate-source Voltage: ±15 V; (4)ID, Drain Current (continuous) at Tc = 25℃: 40 A; (5)ID, Drain Current (continuous) at Tc = 100℃: 28 A; (6)IDM, Drain Current (pulsed): 160 A; (7)Ptot, Total Dissipation at Tc = 25℃: 90 W; Derating Factor: 0.6 W/℃; (8)dV/dt, Peak Diode Recovery voltage slope: 6 V/ns; (9)Tstg, Storage Temperature: -65 to 175℃; (10)Tj Max, Operating Junction Temperature: 175℃.

Features

STP4000QFP features: (1)typical rds(on) = 0.016 w; (2)avalancherugged technology; (3)100% avalanche tested; (4)high current capability; (5)175oc operating temperature; (6)high dv/dt capability; (7)application oriented characterization.

Diagrams

STP4000QFP block diagram