IDT70T653MS12BCGI

Product Summary

The IDT70T653MS12BCGI is a high-speed 512K x 36 Asynchronous Dual-Port Static RAM. The IDT70T653MS12BCGI is designed to be used as a standalone 18874K-bit Dual-Port RAM. The IDT70T653MS12BCGI provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

Parametrics

IDT70T653MS12BCGI absolute maximum ratings: (1)VTERM (VDD) VDD Terminal Voltage with Respect to GND: -0.5 to 3.6V; (2)VTERM(2) (VDDQ) VDDQ Terminal Voltage with Respect to GND: -0.3 to VDDQ + 0.3 V ; (3)VTERM(2) (INPUTS and I/O’s) Input and I/O Terminal Voltage with Respect to GND: -0.3 to VDDQ + 0.3 V; (4)TBIAS(3) Temperature Under Bias: -55 to +125℃; (5)TSTG Storage Temperature: -65 to +150℃; (6)TJN Junction Temperature: +150℃; (7)IOUT(For VDDQ = 3.3V) DC Output Current: 50mA; (8)IOUT(For VDDQ = 2.5V) DC Output Current: 40mA.

Features

IDT70T653MS12BCGI features: (1)True Dual-Port memory cells which allow simultaneous access of the same memory location; (2)High-speed access; (3)RapidWrite Mode simplifies high-speed consecutive write cycles; (4)Dual chip enables allow for depth expansion without external logic; (5)IDT70T653M easily expands data bus width to 72 bits or more using the Busy Input when cascading more than one device; (6)Busy input for port contention management; (7)Interrupt Flags; (8)Full on-chip hardware support of semaphore signaling between ports; (9)Fully asynchronous operation from either port; (10)Separate byte controls for multiplexed bus and bus matching compatibility; (11)Sleep Mode Inputs on both ports; (12)Single 2.5V (±100mV) power supply for core; (13)LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port; (14)Includes JTAG functionality; (15)Available in a 256-ball Ball Grid Array; (16)Industrial temperature range (–40℃ to +85℃) is available for selected speeds.

Diagrams