Product Summary

The CENTRAL SEMICONDUCTOR BCY79-VII is a kind of Silicon PNP Epitaxial Planar Transistor, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

Parametrics

BCY79-VII absolute maximum ratings: (1)Collector-Base, Voltage VCBO: 45 V; (2)Collector-Emitter, Voltage VCEO: 45 V; (3)Emitter-Base Voltage, VEBO: 5.0 V; (4)Collector Current, IC: 100 mA; (5)Collector Current (Peak), ICM: 200 mA; (6)Base Current (Peak), IBM: 200 mA; (7)Power Dissipation, PD: 340 mW; (8)Power Dissipation(TC=25℃), PD: 1.0 W; (9)Operating and Storage, Junction Temperature TJ,Tstg: -65 to +200 ℃; (10)Thermal Resistance, θJA: 450 ℃/W; (11)Thermal Resistance, θJC: 150 ℃/W.

Diagrams

BCY79-VII circuit diagram

BCY78
BCY78

Other


Data Sheet

Negotiable 
BCY79-IX
BCY79-IX

Central Semiconductor

Transistors Bipolar (BJT) PNP 45V 100mA

Data Sheet

0-2000: $0.71
2000-6000: $0.67
6000-10000: $0.59
BCY79IX
BCY79IX

STMicroelectronics

Transistors Bipolar (BJT) RO 511-2N4033

Data Sheet

Negotiable 
BCY79X
BCY79X

Other


Data Sheet

Negotiable 
BCY79VII
BCY79VII

Other


Data Sheet

Negotiable 
BCY79VIII
BCY79VIII

STMicroelectronics

Transistors Bipolar (BJT) RO 511-2N4033

Data Sheet

Negotiable