Product Summary
The CENTRAL SEMICONDUCTOR BCY79-VII is a kind of Silicon PNP Epitaxial Planar Transistor, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
Parametrics
BCY79-VII absolute maximum ratings: (1)Collector-Base, Voltage VCBO: 45 V; (2)Collector-Emitter, Voltage VCEO: 45 V; (3)Emitter-Base Voltage, VEBO: 5.0 V; (4)Collector Current, IC: 100 mA; (5)Collector Current (Peak), ICM: 200 mA; (6)Base Current (Peak), IBM: 200 mA; (7)Power Dissipation, PD: 340 mW; (8)Power Dissipation(TC=25℃), PD: 1.0 W; (9)Operating and Storage, Junction Temperature TJ,Tstg: -65 to +200 ℃; (10)Thermal Resistance, θJA: 450 ℃/W; (11)Thermal Resistance, θJC: 150 ℃/W.
Diagrams
BCY70 |
Other |
Data Sheet |
Negotiable |
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BCY70CSM |
Other |
Data Sheet |
Negotiable |
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BCY71 |
Other |
Data Sheet |
Negotiable |
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BCY71CSM |
Other |
Data Sheet |
Negotiable |
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BCY72 |
Other |
Data Sheet |
Negotiable |
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BCY72CSM |
Other |
Data Sheet |
Negotiable |
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