Product Summary

The CENTRAL SEMICONDUCTOR BCY79-VII is a kind of Silicon PNP Epitaxial Planar Transistor, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

Parametrics

BCY79-VII absolute maximum ratings: (1)Collector-Base, Voltage VCBO: 45 V; (2)Collector-Emitter, Voltage VCEO: 45 V; (3)Emitter-Base Voltage, VEBO: 5.0 V; (4)Collector Current, IC: 100 mA; (5)Collector Current (Peak), ICM: 200 mA; (6)Base Current (Peak), IBM: 200 mA; (7)Power Dissipation, PD: 340 mW; (8)Power Dissipation(TC=25℃), PD: 1.0 W; (9)Operating and Storage, Junction Temperature TJ,Tstg: -65 to +200 ℃; (10)Thermal Resistance, θJA: 450 ℃/W; (11)Thermal Resistance, θJC: 150 ℃/W.

Diagrams

BCY79-VII circuit diagram

BCY78
BCY78

Other


Data Sheet

Negotiable 
BCY78IX
BCY78IX

Other


Data Sheet

Negotiable 
BCY78VII
BCY78VII

Other


Data Sheet

Negotiable 
BCY78VIII
BCY78VIII

Other


Data Sheet

Negotiable 
BCY78X
BCY78X

Other


Data Sheet

Negotiable 
BCY79-IX
BCY79-IX

Central Semiconductor

Transistors Bipolar (BJT) PNP 45V 100mA

Data Sheet

0-2000: $0.71
2000-6000: $0.67
6000-10000: $0.59