Product Summary

The MD918A is a multiple silicon annular transistor. It is designed for use as differnetial amplifiers, dual high frequency amplifers, front and detectors and temeprature compensation applications.

Parametrics

MD918A absolute maximum ratings: (1)collector-emitter voltage, VCEO: 15Vdc; (2)collector-base voltage, VCB: 30Vdc; (3)emitter-base voltage, VEB: 3.0Vdc; (4)collector current-continuous, IC: 50mAdc; (5)total power dissipation, PD: 650mW; (6)operating and storage junction temperature range, Tj, Tstg: -65 to 200℃.

Features

MD918A features: (1)low collector-emitter saturation voltage: VCE(SAT)=0.2Vdc max at IC=10mAdc; (2)DC current gain 50 min at IC=3.0mAdc; (3)high current gain bandwidth product fT=600MHz at IC=4.0mAdc.

Diagrams

MD918A block diagram