Product Summary

The CY7C26325DMB is an 8K x 8 Power-Switched and Reprogrammable PROM. It is packaged in 300-mil-wide package respectively, and does not power down when deselected. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Parametrics

CY7C26325DMB absolute maximum ratings: (1)Storage Temperatures:–65℃ to+150℃; (2)Ambient Temperature with Power Applied:–55℃ to+125℃; (3)Supply Voltage to Ground Potential(Pin 24 to Pin 12):–0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State:–0.5V to+7.0V; (5)DC Input Voltage: –3.0V to + 7.0V; (6)DC Program Voltage(Pin 19 DIP, Pin 23 LCC):13.0V; (7)Static Discharge Voltage: >2001V; (8)Latch-Up Current: >200 mA; (9)UV Exposure: 7258 Wsec/cm2.

Features

CY7C26325DMB features: (1)CMOS for optimum speed/power; (2)Windowed for reprogrammability; (3)High speed; (4)low power; (5)EPROM technology 100% programmable; (6)Slim 300-mil or standard 600-mil packaging available; (7)5V ± 10% VCC, commercial and military; (8)Capable of withstanding greater than 2001V static discharge; (9)TTL-compatible I/O; (10)Direct replacement for bipolar PROMs.

Diagrams

CY7C26325DMB block diagram