Product Summary

The TC554161FTL-70L is a 4,194,304-bit static random access memory(SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS silicon gate process technology, the TC554161FTL-70L operates from a single 5V ±10% power supply. Advanced circuit technology provides both high speed and low power at an operating current 10mA/MHz and a minimum cycle time of 70ns. It is automatically placed in low-power mode at 60μA standby current when chip enable is asserted high.

Parametrics

TC554161FTL-70L absolute maximum ratings: (1)Power supply voltage, VDD: -0.3 to 7V; (2)Input voltage, VIN: -0.3 to 7V; (3)Input/output voltage, VI/O: -0.5 to VDD+0.5V; (4)Power dissipation, PD: 0.6W; (5)Soldering temperature, Tsolder: 260℃; (6)Storage temperature, Tstg: -55 to 150℃; (7)Operating temperature, Topr: 0 to 70℃.

Features

TC554161FTL-70L features: (1)Low-power dissipation, operating: 55mW/MHz; (2)Standby current of 8μA at Ta=25℃; (3)Single power supply voltage pf 5V ±10%; (4)Power down features using CE; (5)Data retention supply voltage of 2 to 5.5V; (6)Direct TTL compatibility for all inputs and outputs.

Diagrams

TC554161FTL-70L block diagram