Product Summary

The RFP30P05 is a P-Channel Power MOSFET. The RFP30P05 manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The device wes designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor can be operated directly from integrated circuits.

Parametrics

RFP30P05 absolute maximum ratings: (1)Drain to Source Voltage, VDSS: -50 V; (2)Drain to Gate Voltage (RGS = 20kW), VDGR: -50 V; (3)Gate to Source Voltage, VGS: ±20 V; (4)Continuous Drain Current, ID: 30A; (5)Pulsed Drain Current (Note 3) (Figure 5), IDM: Refer to Peak Current Curve; (6)Power Dissipation, PD: 120W; (7)Linear Derating Factor: 0.8WQ/℃; (8)Single Pulse Avalanche Rating (Figure 6), EAS: Refer to UIS Curve; (9)Operating and Storage Temperature, TJ, TSTG: -55 to 175℃; (10)Maximum Temperature for Soldering; (11)Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃; (12)Package Body for 10s, See Techbrief 334, Tpkg: 260℃.

Features

RFP30P05 features: (1)30A, 50V; (2)rDS(ON) = 0.065Ω; (3)Temperature Compensating PSPICE?Model; (4)Peak Current vs Pulse Width Curve; (5)UIS Rating Curve; (6)175℃ Operating Temperature; (7)Related Literature-TB334 "Guidelines for Soldering Surface Mount; (8)Components to PC Boards".

Diagrams

RFP30P05 block diagram

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