Product Summary
The NTD80N02T4G is a 24V, 80A, N-Channel DPAK. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Parametrics
NTD80N02T4G absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 24Vdc; (2)Gate-to-Source Voltage-Continuous VGS: ±20Vdc; (3)Drain Current-Continuous @ TC = 25℃ ID: 80Adc; (4)Drain Current-Single Pulse (tp = 10μs) IDM: 200Adc; (5)Total Power Dissipation @ TC = 25℃ PD: 75 Watts; (6)Operating and Storage Temperature Range: -55 to 150℃; (7)Single Pulse Drain-to-Source Avalanche Energy-Starting TJ = 25℃; (8)(VDD = 24Vdc, VGS = 10Vdc, IL = 17Apk, L = 5.0mH, RG = 25Ω); (9)EAS: 733mJ; (10)Thermal Resistance Junction-to-Case: 1.65℃/W; (11)Junction-to-Ambient (Note 1): 6℃/W; (12)Junction-to-Ambient (Note 2): 120℃/W; (13)Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL: 260℃.
Features
NTD80N02T4G feature: (1) Pb-Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
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![]() NTD80N02T4G |
![]() ON Semiconductor |
![]() MOSFET NFET DPAK 24V 80A 60mOhm |
![]() Data Sheet |
![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
![]() |
![]() NTD80N02 |
![]() ON Semiconductor |
![]() MOSFET 24V 80A N-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() NTD80N02T4G |
![]() ON Semiconductor |
![]() MOSFET NFET DPAK 24V 80A 60mOhm |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() NTD85N02R-1G |
![]() ON Semiconductor |
![]() MOSFET 24V 85A N-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() NTD85N02RT4G |
![]() ON Semiconductor |
![]() MOSFET 24V 85A N-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() NTD85N02RT4 |
![]() ON Semiconductor |
![]() MOSFET 24V 85A N-Channel |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() NTD85N02RG |
![]() ON Semiconductor |
![]() MOSFET 24V 85A N-Channel |
![]() Data Sheet |
![]() Negotiable |
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