(China (Mainland))
Product Summary
The MG200Q1US41 is an N channel IGBT. The applications of it include high power switching and motor control.
Parametrics
MG200Q1US41 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current:IC:200A, ICP:400A; (4)forward current:IF:200A, IFM:400A; (5)collector power dissipation:1400W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:2/3/3N.m.
Features
MG200Q1US41 features: (1)high input impedance; (2)high speed: tf=0.5us(max.) , trr=0.5us(max.); (3)low saturation voltage: VCE(sat)=4.0V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.
Diagrams
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MG2001 |
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MG2002 |
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MG2004 |
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MG200J6ES60 |
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MG200J6ES61 |
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IGBT MOD CMPCT 600V 200A |
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