(China (Mainland))
Product Summary
The IXFN50N80Q2 is a Power MOSFET. The applications of the IXFN50N80Q2 include Switch-Mode and Resonant-Mode Power Supplies ＞500kHz Switching, DC-DC Converters, DC Choppers, Pulse Generation, Laser Drivers.
Parametrics
IXFN50N80Q2 absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 800V; (2)VDGR TJ = 25℃ to 150℃, RGS = 1MΩ: 800V; (3)VGSS Continuous: ±30V; (4)VGSM Transient: ±40V; (5)ID25 TC = 25℃: 50A; (6)IDM TC = 25℃, Pulse Width Limited by TJM: 200A; (7)IA TC = 25℃: 50A; (8)EAS TC = 25℃: 5J.
Features
IXFN50N80Q2 features: (1)International Standard Package; (2)miniBLOC, with Aluminium Nitride Isolation; (3)Isolation Voltage 2500 V; (4)High Current Handling Capability; (5)Fast Intrinsic Rectifier; (6)Avalanche Rated; (7)Low RDS(on).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IXFN50N80Q2 |
Ixys |
MOSFET 50 Amps 800V |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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IXFN 23N100 |
Other |
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Data Sheet |
Negotiable |
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IXFN 24N100 |
Other |
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Data Sheet |
Negotiable |
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IXFN 24N100F |
Other |
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Data Sheet |
Negotiable |
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IXFN 25N80 |
Other |
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Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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IXFN 280N07 |
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Data Sheet |
Negotiable |
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