Product Summary

The APT50GF120JRD is a high voltage power IGBT. Using Non- Punch Through Technology the Fast IGBT combined with an APT freewheeling ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

Parametrics

APT50GF120JRD absolute maximum ratings: (1)Collector-Emitter Voltage: 1200V; (2)Collector-Gate Voltage (RGE = 20KW): 1200V; (3)Gate-Emitter Voltage: ±20V; (4)Continuous Collector Current @ TC = 25℃: 75A; (5)Continuous Collector Current @ TC = 90℃: 50A; (6)Pulsed Collector Current 1 @ TC = 25℃: 150A; (7)Pulsed Collector Current 1 @ TC = 90℃: 100A; (8)Total Power Dissipation: 460W; (9)Operating and Storage Junction Temperature Range: -55℃ to 150℃; (10)Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.: 300℃

Features

APT50GF120JRD features: (1) Low Forward Voltage Drop; (2) High Freq. Switching to 20KHz; (3) Low Tail Current; (4) Ultra Low Leakage Current; (5)RBSOA and SCSOA Rated; (6)Ultra fast Soft Recovery Antiparallel Diode.

Diagrams

APT50GF120JRD block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT50GF120JRD
APT50GF120JRD
Other

Data Sheet
Negotiable 
APT50GF120JRDQ3
APT50GF120JRDQ3

IGBT 1200V 120A 521W SOT227
Data Sheet
0-1: $35.75
1-10: $33.65
10-100: $29.97
100-250: $28.39
250-500: $27.34
500-1000: $26.29
1000-2500: $25.76
2500-5000: $25.24