Product Summary

The AO4614 is a Complementary Enhancement Mode Field Effect Transistor. The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS (ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications). AO4614L is a Green Product ordering option. AO4614 and AO4614L are electrically identical.

Parametrics

AO4614 absolute maximum ratings: (1)Drain-Source Voltage: 40V, -40V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current @ TA =25℃: 6A, -5A; (4)Continuous Drain Current @ TA =70℃: 5A, -4A; (5)Pulsed Drain Current: 20A, -20A; (6)Power Dissipation @ TA =25℃: 2W; (7)Power Dissipation @ TA =70℃: 1.28W; (8)Junction and Storage Temperature Range: -55 TO 150℃.

Features

AO4614 features: (1)n-channel p-channel; (2)VDS (V) = 40V -40V; (3)ID = 6A (VGS=10V) -5A (VGS = -10V); (4)RDS(ON) RDS(ON); (5)＜31mΩ (VGS=10V) ＜ 45mΩ (VGS = -10V); (6)＜45mΩ (VGS=4.5V) ＜ 63mΩ (VGS = -4.5V).

Diagrams

AO4614 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4614
AO4614
Other

Data Sheet
Negotiable 
AO4614A
AO4614A

MOSFET N/P-CH COMPL 40V 8-SOIC
Data Sheet
Negotiable 
AO4614B
AO4614B

MOSFET DUAL P+N CH 40V 5A SOIC8
Data Sheet
0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16