(China (Mainland))
Product Summary
The MRF5P21240 is a RF power field effect transistor. It is designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. The MRF5P21240 is used in Class AB for PCN-PCS/cellular radio and WLL applications.
Parametrics
MRF5P21240 absolute maximum ratings: (1)Drain.Source Voltage VDSS: 65 Vdc; (2)Gate.Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25℃ PD: 500 Watts, Derate above 25℃: 2.86 W/℃; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Operating Junction Temperature TJ: 200 ℃; (6)CW Operation CW: 180 Watts.
Features
MRF5P21240 features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz, 180 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large.Signal Impedance Parameters; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 MRF5P21240_1214258 |
Other |
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Data Sheet |
Negotiable |
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MRF5P21240HR5 |
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MOSFET RF N-CHAN 28V 52W NI-1230 |
Data Sheet |
Negotiable |
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MRF5P21240HR6 |
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MOSFET RF N-CHAN 28V 52W NI-1230 |
Data Sheet |
Negotiable |
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