(China (Mainland))
Product Summary
The CY7C291A-50WMB is a high-performance 2K-word by 8-bit CMOS PROM. It is packaged in a 300-mil ceramic package which may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C291A-50WMB is a plug-in replacement for bipolar devices and offers the advantage of lower power, reprogrammability, superior performance and programming yield.
Parametrics
CY7C291A-50WMB absolute maximum ratings: (1)Storage Temperature: -65℃ to+150℃; (2)Ambient Temperature with Power Applied: -55℃ to+125℃; (3)Supply Voltage to Ground Potential: -0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State: -0.5V to +7.0V; (5)DC Input Voltage: -3.0V to +7.0V; (6)DC Program Voltage: 13.0V; (7)UV Exposure: 7258 Wsec/cm2; (8)Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015); (9)Latch-Up Current: >200 mA.
Features
CY7C291A-50WMB features: (1)Windowed for reprogrammability; (2)CMOS for optimum speed/power; (3)High speed, 20 ns (Commercial); 35 ns (Military); (4)Low power, 660 mW (Commercial and Military); (5)Low standby power, 220 mW (Commercial and Military); (6)EPROM technology 100% programmable; (7)Slim 300-mil or standard 600-mil packaging available; (8)5V ±10% VCC, commercial and military; (9)TTL-compatible I/O; (10)Direct replacement for bipolar PROMs; (11)Capable of withstanding >2001V static discharge.
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