Product Summary

The CY6116-55DMB is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable and active LOW output enable, and three-state drivers. The CY6116-55DMB has an automatic power-down feature, reducing the power consumption by 83% when deselected. Writing to the device is accomplished when the chip enable and write enable inputs are both LOW. Data on the I/O pins is written into the memory location specified on the address pins.

Parametrics

CY6116-55DMB absolute maximum ratings: (1)Storage temperature: -65 to 150℃; (2)Ambient temperature with power applied: -55 to 125℃; (3)Supply voltage to ground potential: -0.5 to 7V; (4)DC voltage applied to outputs in high Z state: -0.5 to 7V; (5)DC inout voltage: -3V to 7V; (6)Output current into output: 20mA.

Features

CY6116-55DMB features: (1)Automatic power-down when deselected; (2)CMOS for optimum speed/power; (3)High speed, 20ns; (4)Low active power, 550mW; (5)Low standby power, 110mW; (6)TTL-compatible inputs and outputs; (7)Capable of withstanding greater than 2001V electrostatic discharge.

Diagrams

CY6116-55DMB block diagram