AM29LV040B-120JF

Product Summary

The AM29LV040B-120JFis a single power supply, 4Mbit, 3.0 Volt-only Flash memory device organized as 524,288 bytes. The data appears on DQ0-DQ7. The AM29LV040B-120JF is available in 32-pin PLCC and 32-pin TSOP packages. All read, erase, and program operations are accomplished using only a single power supply. The AM29LV040B-120JF can also be programmed in standard EPROM programmers. The device offers access times of 60, 70, 90, and 120 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)-to control normal read and write operations.

Parametrics

AM29LV040B-120JF absolute maximum ratings: (1)Storage Temperature Plastic Packages:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–65℃ to +125℃; (3)Voltage with Respect to Ground: VCC:–0.5 V to +4.0 V, A9, OE#:–0.5 V to +12.5 V, All other pins:–0.5 V to VCC+0.5 V; (4)Output Short Circuit Current:200 mA.

Features

AM29LV040B-120JF features: (1)Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications; (2)Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors; (3)Full voltage range: access times as fast as 70 ns; (4)Regulated voltage range: access times as fast as 60 ns; (5)Manufactured on 0.32 μm process technology; (6)Ultra low power consumption (typical values at 5MHz): Automatic sleep mode: 0.2 μA, Standby mode: 0.2 μA, Read mode: 7 mA, Program/erase mode: 15 mA; (7)Hardware method of locking a sector to prevent any program or erase operations within that sector; (8)Sectors can be locked via programming equipment; (9)Embedded Erase algorithms automatically preprogram and erase the entire chip or any combination of designated sectors; (10)Embedded Program algorithms automatically writes and verifies data at specified addresses.

Diagrams