HMC580ST89E

HMC580ST89E, HBT Gain Block MMIC SMT amplifier, SOT, 5.5V, 10dBm, 0.59W

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Price:: US $0.80~1.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	1.00 / Piece
101 ~ 500 :	0.90 / Piece
501 ~ 1000 :	0.80 / Piece

PartNumber:: HMC580ST89E

Brand:: Hittite Microwave Corporation - Hittite | Pack: SOT | D/C: 08+

Availability:: Supply Ability: 100/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2012-12-24

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Part Number:HMC580ST89E
US $0.80 - 1.00
Quantity:

piece

Product Summary

The HMC580ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26dBm output power. The HMC580ST89E offers 22 dB of gain with a +37dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. The applications of the HMC580ST89E include Cellular / PCS / 3G, Fixed Wireless & WLAN, CATV, Cable Modem & DBS, Microwave Radio & Test Equipment, IF & RF Applications.

Parametrics

HMC580ST89E absolute maximum ratings: (1)Collector Bias Voltage (Vcc): +5.5Vdc; (2)RF Input Power (RFIN)(Vcc = +4.2Vdc): +10dBm; (3)Junction Temperature: 150℃; (4)Continuous Pdiss (T = 85℃) (derate 9mW/℃ above 85℃): 0.59W; (5)Thermal Resistance (junction to lead): 110℃/W; (6)Storage Temperature: -65 to +150℃; (7)Operating Temperature: -40 to +85℃; (8)ESD Sensitivity (HMB): Class 1C.

Features

HMC580ST89E features: (1) P1dB Output Power: +22dBm; (2) Gain: 22 dB; (3) Output IP3: +37dBm; (4) Cascadable 50 Ohm I/Os; (5) Single Supply: +5V; (6) Industry Standard SOT89 Package.