Product Summary

The CY62148ELL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL in portable applications such as cellular telephones. The CY62148ELL-45ZSXI also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH).

Parametrics

CY62148ELL-45ZSXI absolute maximum ratings: (1)Storage Temperature: -65℃ to + 150℃; (2)Ambient Temperature with Power Applied: -55℃ to + 125℃; (3)Supply Voltage to Ground Potential: -0.5V to 6.0V (VCCmax + 0.5V); (4)DC Voltage Applied to Outputs in High-Z State: -0.5V to 6.0V (VCCmax + 0.5V); (5)DC Input Voltage: -0.5V to 6.0V (VCCmax + 0.5V); (6)Output Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: > 2001V; (8)(per MIL-STD-883, Method 3015); (9)Latch-up Current: >200mA.

Features

CY62148ELL-45ZSXI features: (1)Very high speed: 45 ns; (2)Voltage range: 4.5V-5.5V; (3)Pin compatible with CY62148B; (4)Ultra low standby power, Typical standby current: 1μA; Maximum standby current: 7μA (Industrial); (5)Ultra low active power, Typical active current: 2.0 mA @ f = 1 MHz; (6)Easy memory expansion with CE, and OE features; (7)Automatic power down when deselected; (8)CMOS for optimum speed and power; (9)Available in Pb-free 32-pin TSOP II and 32-pin SOIC packages.

Diagrams

CY62148ELL-45ZSXI block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
CY62148ELL-45ZSXI
CY62148ELL-45ZSXI

Cypress Semiconductor

SRAM 4M MoBL Ultra LO Pwr HI SPD Micropwr IND

Data Sheet

0-1: $4.75
1-25: $4.10
25-100: $3.88
100-250: $3.23
CY62148ELL-45ZSXIT
CY62148ELL-45ZSXIT

Cypress Semiconductor

SRAM 4M MoBL Ultra LO Pwr HI SPD Micropwr IND

Data Sheet

0-692: $3.17
692-1000: $2.95
1000-2000: $2.84